I attach the slides of a presentation at the ASME meeting. The talk was based on several recent papers on soft active materials (SAMs). To give an uncluttered picture of the pull-in instability, I have removed all discussion on the Maxwell stress. As you can see, the problem can be studied without ever mentioning this troublesome notion.
A large quantity of small molecules may migrate into a network of long polymers, causing the network to swell, forming an aggregate known as a polymeric gel. This paper formulates a theory of the coupled mass transport and large deformation.
This paper studies a gel formed by a network of cross-linked polymers and a species of mobile molecules. The gel is taken to be a dielectric, in which both the polymers and the mobile molecules are nonionic. We formulate a theory of the gel in contact with a solvent made of the mobile molecules, and subject to electromechanical loads. A free-energy function is constructed for an ideal dielectric gel, including contributions from stretching the network, mixing the polymers and the small molecules, and polarizing the gel.
This letter describes a method to analyze electromechanical stability of dielectric elastomer actuators. We write the free energy of an actuator using stretches and nominal electric displacement as generalized coordinates, and pre-stresses and voltage as control parameters. When the Hessian of the free-energy function ceases to be positive-definite, the actuator thins down drastically, often resulting in electrical breakdown. Our calculation shows that stability of the actuator is markedly enhanced by pre-stresses.
When an electric voltage is applied across the thickness of a thin layer of an dielectric elastomer, the layer reduces its thickness and expands its area. This electrically induced deformation can be rapid and large, and is potentially useful as soft actuators in diverse technologies. Recent experimental and theoretical studies have shown that, when the voltage exceeds some critical value, the homogenous deformation of the layer becomes unstable, and the layer deforms into a mixture of thin and thick regions.
In flip-chip package, the mismatch of thermal expansion coefficients between the silicon die and packaging substrate induces concentrated stress field around the edges and corners of silicon die during assembly, testing and services. The concentrated stresses result in delamination on many interfaces on several levels of structures, in various length scales from tens of nanometers to hundreds of micrometers. A major challenge to model flip-chip packages is the huge variation of length scales, the complexity of microstructures, and diverse materials properties. In this paper, we simplify the structure to be silicon/substrate with wedge configuration, and neglect the small local features of integrated circuits. This macroscopic analysis on package level is generic with whatever small local features, as long as the physical processes of interest occur in the region where the concentrated stress field due to chip-packaging interaction dominates. Because it is the same driving force that motivates all of the flaws. Therefore, the different interface cracks with same size and same orientation but on different interfaces should have similar energy release rates provided that the cracks are much smaller than the macroscopic length. We calculate the energy release rate and the mode angle of crack on the chip-package interface based on the asymptotic linear elastic stress field. In a large range of crack length, the asymptotic solution agrees with finite element calculation very well. We discuss the simplified model and results in context of real applications. In addition, we find that the relation of energy release rate G and crack length a is not power-law since local mode mixity is dependent of crack length a. Therefore, the curve of G~a can be wavy and hardly goes to zero even if crack length a goes to atomically small. The local mode mixity plays an important role in crack behavior.
