As you know, the volumetric expansion by 9% during the water-to-ice transition can generate tremendous pressure in a confined space is a common sense. As a result, one may expect freezing water to also fracture rocks.

However, in a recent article in Science, Bernard Hallet explains the power of the 9% water-to-ice expansion in confined spaces is undeniable, but it may rarely be significant for rocks under natural conditions, because it requires a tight orchestration of unusual conditions. Unless the rocks are essentially saturated with water and frozen from all sides, the expansion can simply be accommodated by the flow of water into empty pores, or out of the rock through its unfrozen side.

I think it may be of interest to mechanics. Read more
I hope to hear opinions from people who know about the breaking mechanics of rocks.

This is a paper we recently published in JMPS on a study of the mechanical properties on thin films comparing experimental results with discrete dislocation simulations. It provides insight in the strengthening that occurs in thin metal films when surface or interface effects become important.

The abstract is below; the full paper can be downloaded from here

Abstract - Experimental measurements and computational results for the evolution of plastic deformation in freestanding thin films are compared. In the experiments, the stress–strain response of two sets of Cu films is determined in the plane-strain bulge test. One set of samples consists of electroplated Cu films, while the other set is sputter-deposited. Unpassivated films, films passivated on one side and films passivated on both sides are considered. The calculations are carried out within a two-dimensional plane strain framework with the dislocations modeled as line singularities in an isotropic elastic solid. The film is modeled by a unit cell consisting of eight grains, each of which has three slip systems. The film is initially free of dislocations which then nucleate from a specified distribution of Frank–Read sources. The grain boundaries and any film-passivation layer interfaces are taken to be impenetrable to dislocations. Both the experiments and the computations show: (i) a flow strength for the passivated films that is greater than for the unpassivated films and (ii) hysteresis and a Bauschinger effect that increases with increasing pre-strain for passivated films, while for unpassivated films hysteresis and a Bauschinger effect are small or absent. Furthermore, the experimental measurements and computational results for the 0.2% offset yield strength stress, and the evolution of hysteresis and of the Bauschinger effect are in good quantitative agreement.

It is well-recognized that MEMS switches, compared to their more traditional solid state counterparts, have several important advantages for wireless communications.  These include superior linearity, low insertion loss and high isolation.  Indeed, many potential applications have been investigated such as Tx/Rx antenna switching, frequency band selection, tunable matching networks for PA and antenna, tunable filters, and antenna reconfiguration. 

However, none of these applications have been materialized in high volume products to a large extent because of reliability concerns, particularly those related to the metal contacts.  The subject of the metal contact in a switch was studied extensively in the history of developing miniaturized switches, such as the reed switches for telecommunication applications.  While such studies are highly relevant, they do not address the issues encountered in the sub 100mN, low contact force regime in which most MEMS switches operate.  At such low forces, the contact resistance is extremely sensitive to even a trace amount of contamination on the contact surfaces.  Significant work was done to develop wafer cleaning processes and storage techniques for maintaining the cleanliness.  To preserve contact cleanliness over the switch service lifetime, several hermetic packaging technologies were developed and their effectiveness in protecting the contacts from contamination was examined.  

Stresses inevitably arise in a microelectronic device due to mismatch in coefficients of thermal expansion, mismatch in lattice constants, and growth of materials. Moreover, in the technology of strained silicon devices, stresses have been deliberately introduced to increase carrier mobility. A device usually contains sharp features like edges and corners, which may intensify stresses, inject dislocations into silicon, and fail the device. On the basis of singular stress fields near the sharp features, this letter describes a method to obtain conditions that avert dislocations.

In a recent article in Physical Review Letters, Alain Goriely and Sébastien Neukirch offer a mechanical model of how the free tip of a twining plant can hold onto a smooth support, allowing the plant to grow upward. The model also explains why these vines cannot grow on supports of too large a diameter. Read more.

The mechanics involves large deflection and bifurcation of a rod. I hope to hear opinions from people who know about the mechanics of plants.

Applications are invited from suitably qualified candidates for a University Lectureship in Solid Mechanics, which falls within the Mechanics, Materials and Design Division of the Engineering Department. The successful candidate will take up the appointment as soon as possible.

The lectureship has recently been endowed by David and Susan Hibbitt, and the aim is to attract a high calibre researcher with a record of scholarship and research in experimental, computational and/or theoretical solid mechanics. Expertise is required in the mechanics of materials (structural, biological or energy materials, for example) and the successful candidate is expected to make a significant contribution to the Department’s teaching and research activities and to build a strong, externally funded research programme. The activity will fit within the Cambridge Centre for Micromechanics, which is an inter-departmental, inter-disciplinary research group housed within the Engineering Department.

Biomechanics is a reasonably well-developed field of study, with a modern history usually linked to the pioneering work of Prof. Y.C. Fung in the 1960s. There are a number of dedicated biomechanics journals (including but not limited to the Journal of Biomechanics and the Journal of Biomechanical Engineering). The field is well-enough established to have several generations of researchers working on the subject at universities across the world.

Symposium DD at the upcoming Materials Research Society Annual Meeting (Nov. 26-Dec. 1, Boston, MA) will be the latest in a series of MRS symposia on the mechanics of biological materials and materials designed following natural principles ("biomimetic" or "bio-inspired").   The full program is available at the MRS website (www.mrs.org).  This topic was also the subject of the August, 2006 focus issue of the Journal of Materials Research, which contained over 30 articles on the subject.

The electromigration lifetime is measured for a large number of copper lines encapsulated in an organosilicate glass low-permittivity dielectric. Three testing variables are used: the line length, the electric current density, and the temperature. A copper line fails if a void near the upstream via grows to a critical volume that blocks the electric current. The critical volume varies from line to line, depending on line-end designs and chance variations in the microstructure. However, the statistical distribution of the critical volume (DCV) is expected to be independent of the testing variables. By contrast, the distribution of the lifetime (DLT) strongly depends on the testing variables. For a void to grow a substantial volume, the diffusion process averages over many grains along the line. Consequently, the void volume as a function of time, V(t), is insensitive to chance variations in the microstructure. As a simplification, we assume that the function V(t) is deterministic, and calculate this function using a transient model. We use the function V(t) to convert the experimentally measured DLT to the DCV. The same DCV predicts the DLT under untested conditions.