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Short Course on Enriched Finite Element Methods at WCCM in NY

Submitted by Angelo Simone on

We'd like to announce an upcoming short course in Enriched Finite Element Methods at the 13th World Congress in Computational Mechanics (http://www.wccm2018.org/). The course will be held on Sunday 22nd July at the New York Marriott Marquis hotel.

More information can be found on the flyer and at the course page.

Armando Duarte, University of Illinois at Urbana-Champaign
Angelo Simone, University of Padova / Delft University of Technology

Post-doctoral fellow in Chile's Legato Team

Submitted by Stephane Bordas on

Possibilities for postdoctoral fellowships in Computational Mechanics with Elena Atroshchenko in collaboration within the Legato Team http://legato-team.eu

Please apply here: http://www.conicyt.cl/fondecyt/2016/09/06/concurso-postdoctorado-2018/

If you need information, please contact Elena Atroshchenko eatroshchenko [at] ing.uchile.cl>

Time integration scheme for Dynamic Crack Propagation in XFEM?

Submitted by abbhuiya on

Hello,

 

I am trying to implement the time integration scheme proposed by Combescure et. al [1] to simulate a dynamic crack propagation problem in XFEM (2D edge crack under impact loading). But I have an interesting question to ask.

 

Why two different heaviside enrichment functions used in XFEM?

Submitted by abbhuiya on

I have been looking at XFEM literature for a while and wondering why do we need 2 different heaviside enrichment functions in XFEM? In paper titled "A finite element method for crack growth without remeshing" by Nicolas Moes et al.(1999), they use the following function for heaviside enrichment:

 H(x,y)={1, for y>0

             -1,for y<0}

Project Fellow (PhD) position for Indo-China project in Computational Mechanics

Submitted by Gaurav Singh on

The project is between BITS Pilani (India) and Wuhan University (China), funded by the Ministry of Mines, Govt. of India. It is in the area of computational fracture mechanics.

Details of the project and application process is in the attachment.