Vibrations of a Cantilever Beam
I found this paper on Vibrations of a Cantilever Beam. Thought I would share it with the rest of the class.
http://em-ntserver.unl.edu/Mechanics-Pages/Scott-Whitney/325hweb/Beams…
Cheers.
I found this paper on Vibrations of a Cantilever Beam. Thought I would share it with the rest of the class.
http://em-ntserver.unl.edu/Mechanics-Pages/Scott-Whitney/325hweb/Beams…
Cheers.
USTC's Department of Modern Mechanics, founded in 1958, first chaired by famous scientist, Prof. H.S. Tsien, is among the most prestigious in China.
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CA #2 Natural frequency problem
Due on Monday (Nov. 20) in class
Zhen Zhang and Zhigang Suo (Harvard), Jun He (Intel)
Attached is a set of slides presented at ASME Congress, 10 November 2006. Thermal strains and electromigration can cause voids to grow in conductor lines on semiconductor chips. This long-standing failure mode is exacerbated by the recent introduction of low-permittivity dielectrics. We describe a method to calculate the volume of a saturated void (VSV), attained in a steady state when each point in a conductor line is in a state of hydrostatic pressure, and the gradient of the pressure along the conductor line balances the electron wind. We show that the VSV will either increase or decrease when the coefficient of thermal expansion of the dielectric increases, and will increase when the elastic modulus of the dielectric decreases. The VSV will also increase when porous dielectrics and ultrathin liners are used. At operation conditions, both thermal strains and electromigration make significant contributions to the VSV. We discuss these results in the context of interconnect design.
The electromigration lifetime is measured for a large number of copper lines encapsulated in an organosilicate glass low-permittivity dielectric. Three testing variables are used: the line length, the electric current density, and the temperature. A copper line fails if a void near the upstream via grows to a critical volume that blocks the electric current. The critical volume varies from line to line, depending on line-end designs and chance variations in the microstructure. However, the statistical distribution of the critical volume (DCV) is expected to be independent of the testing variables. By contrast, the distribution of the lifetime (DLT) strongly depends on the testing variables. For a void to grow a substantial volume, the diffusion process averages over many grains along the line. Consequently, the void volume as a function of time, V(t), is insensitive to chance variations in the microstructure. As a simplification, we assume that the function V(t) is deterministic, and calculate this function using a transient model. We use the function V(t) to convert the experimentally measured DLT to the DCV. The same DCV predicts the DLT under untested conditions.
Each student creates a project that addresses a phenomenon or issue in plasticity theory, and presents it in class after the winter break. The scope of the projects is very wide: experimental, computational, or a critical discussion of one or more papers. The project contributes 30% of the grade, distributed as follows:
The notes mentioned in the problem (Rice, Solid Mechanics, pp65-68) is attached.
A viscous-elastic-plastic indentation model was used to assess the local variability of properties in healing porcine bone. Constant loading- and unloading-rate depth-sensing indentation tests were performed and properties were computed from nonlinear curve-fits of the unloading displacement-time data. Three properties were obtained from the fit: modulus (the coefficient of an elastic reversible process), hardness (the coefficient of a nonreversible, time-independent process) and viscosity (the coefficient of a nonreversible, time-dependent process). The region adjacent to the dental implant interface demonstrated a slightly depressed elastic modulus along with an increase in local time-dependence (lower viscosity); there was no clear trend in bone hardness with respect to the implant interface.
Jeannette M. Jacques, Ting Y. Tsui, Andrew J. McKerrow, and Robert Kraft
To improve capacitance delay performance of the advanced back-end-of-line (BEOL) structures, low dielectric constant organosilicate glass (OSG) has emerged as the predominant choice for intermetal insulator. The material has a characteristic tensile residual stress and low fracture toughness. A potential failure mechanism for this class of low-k dielectric films is catastrophic fracture due to channel cracking. During fabrication, channel cracks can also form in a time-dependent manner due to exposure to a particular environmental condition, commonly known as stress-corrosion cracking. Within this work, the environmental impacts of pressure, ambient, temperature, solution pH, and solvents upon the channel cracking of OSG thin films are characterized. Storage under high vacuum conditions and exposure to flowing dry nitrogen gas can significantly lower crack propagation rates. Cracking rates experience little fluctuation as a function of solution pH; however, exposure to aqueous solutions can increase the growth rate by three orders of magnitude.