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ES 242r

Strain-induced self-assembly

Submitted by Zhigang Suo on

Semiconductor particles in the size rage 1-100 nm have special optoelectronic properties dictated by the quantum mechanics of the potential well. These particles are known as quantum dots. Fabricating structures in this size range has been a great challenge of our time. Self-assembly has become an attractive method to fabricate quantum dots. By 1990, it was known that when Ge was deposited on Si substrate, cube on cube, the Ge film is flat up to a few monolayers, and then forms three-dimensional islands.

Stress-Induced Voiding in Interconnects

Submitted by Zhigang Suo on

Early aluminum lines had the width much larger than the thickness. They behaved like blanket films. When narrow aluminum lines were introduced, in early 1980s, with the width comparable to the thickness, voids were observed in such narrow interconnects on wafers held in ovens, or even on wafers left on shelves at room temperature. The voids may sever the interconnects.