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Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon

Submitted by Shuze Zhu on
research
Strain Eingineering
Edge-Doping
2D materials
Spintronics
Teng Li Group Research

Shuze Zhu* and Teng Li*, Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon, Physical Review B, 93, 115401 (2016)

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