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Most friction models for automatic control are targeted for the macro world, and are of questionable value for the motion control of the high precision positioing stages. We published a paper recently in Technishes Messen (TM) on a study of the friction behavior in the moving range of micrometers. It provides info for the development of friction models targeted for the motion control in high precision engineering.

The following is the abstract, and the full paper can be downloaded from http://www.atypon-link.com/OLD/doi/abs/10.1524/teme.2006.73.9.500

Stresses inevitably arise in a microelectronic device due to mismatch in coefficients of thermal expansion, mismatch in lattice constants, and growth of materials. Moreover, in the technology of strained silicon devices, stresses have been deliberately introduced to increase carrier mobility. A device usually contains sharp features like edges and corners, which may intensify stresses, inject dislocations into silicon, and fail the device. On the basis of singular stress fields near the sharp features, this letter describes a method to obtain conditions that avert dislocations.

The electromigration lifetime is measured for a large number of copper lines encapsulated in an organosilicate glass low-permittivity dielectric. Three testing variables are used: the line length, the electric current density, and the temperature. A copper line fails if a void near the upstream via grows to a critical volume that blocks the electric current. The critical volume varies from line to line, depending on line-end designs and chance variations in the microstructure. However, the statistical distribution of the critical volume (DCV) is expected to be independent of the testing variables. By contrast, the distribution of the lifetime (DLT) strongly depends on the testing variables. For a void to grow a substantial volume, the diffusion process averages over many grains along the line. Consequently, the void volume as a function of time, V(t), is insensitive to chance variations in the microstructure. As a simplification, we assume that the function V(t) is deterministic, and calculate this function using a transient model. We use the function V(t) to convert the experimentally measured DLT to the DCV. The same DCV predicts the DLT under untested conditions.

Jeannette M. Jacques, Ting Y. Tsui, Andrew J. McKerrow, and Robert Kraft

To improve capacitance delay performance of the advanced back-end-of-line (BEOL) structures, low dielectric constant organosilicate glass (OSG) has emerged as the predominant choice for intermetal insulator. The material has a characteristic tensile residual stress and low fracture toughness. A potential failure mechanism for this class of low-k dielectric films is catastrophic fracture due to channel cracking. During fabrication, channel cracks can also form in a time-dependent manner due to exposure to a particular environmental condition, commonly known as stress-corrosion cracking. Within this work, the environmental impacts of pressure, ambient, temperature, solution pH, and solvents upon the channel cracking of OSG thin films are characterized. Storage under high vacuum conditions and exposure to flowing dry nitrogen gas can significantly lower crack propagation rates. Cracking rates experience little fluctuation as a function of solution pH; however, exposure to aqueous solutions can increase the growth rate by three orders of magnitude.

Since I know (or was told 20 minutes ago) that some of you are interested in large area electronics and displays, I thought I would throw something out for you.

Lately, e-book readers have been a new trend in the tech industry. The potential for it is incredible: hundreds of books in the palm of your hand, digitized content distribution, and infinite number of bookmarks, searchable text, hyperlinks between books; the list goes on. However, all these benefits come at a price; namely battery life and readability.

But what kind of display should they use? The average LCD screen has about 72 dpi (dots per inch), meaning that there are 72 pixels in every inch of screen. While that's passable for regular computer usage, anyone who's tried heavy reading will tell you that it's just not clear enough. By comparison, the average newspaper has over 300 dpi, and the average book has about 400 dpi.

When a mechanical engineer and a material scientist were asked for the root cause of an in-vivo fracture. Mechanical engineer pointed to the loading and the material scientist pointed to the processing. While they both are correct, they both also missed the real ROOT cause, the design.

It is very common that medical device design engineers are so focused on the device functionality that often the very basic mechanics is overlooked. Lack of knowledge on the in-vivo environment (Design Requirements) is another subject to blame. However, it is common that even technology driven companies have gaps between design department and duarability deparment. Up front design engineers do not necessarily keep up with the fast paces of material advances. On the other hand, downstram subject matter experts, device tesing teams or often the R&D departments are not informed of design changes before the design is fixed. The problem is worse often in industrial leaders than in start-ups, but the sympton is the same, problem found in animal studies and/or clinical trials before they reached industrial subject matter experts.

One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film.