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Split singularities and dislocation injection in strained silicon

By Martijn Feron, Zhen Zhang and Zhigang Suo

The mobility of charge carriers in silicon can be significantly increased when silicon is subject to a field of strain.In a microelectronic device, however, the strain field may be intensified at a sharp feature, such as an edge or a corner, injecting dislocations into silicon and ultimately failing the device. The strain field at an edge is singular, and is often a linear superposition of two modes of different exponents. We characterize the relative contribution of the two modes by a mode angle, and determine the critical slip systems as the amplitude of the load increases. We calculate the critical residual stress in a thin-film stripe bonded on a silicon substrate.

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Web journals threaten peer-review system

The peer review system has been the established way to select publicated research for decades. However, this way of publishing may come to an end.

New developments in this field embrace the idea that research should not be restricted by the iron grip of the journals. The value of the authors work is debated in cyberspace, leading to a number of consequences. Disadvantages include the possibility of a deluge of junk science due to the unfiltered publishing and online abuse concerning unfairly ridiculing rival's work. On the other side scientific discovery could be accelerated and online critiques may help detect mistakes or fraud more quickly.

Already the first initiatives are present, Philica, PLoS (Public Library of Science). Online journals are not boomingly popular, as they have attracted little attention so far. However, possibilities regarding reaching a broad audience in a fast way seem promising...

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