Xuanhe Zhao and Zhigang Suo  We develop a thermodynamic model of electrostriction for elastic dielectrics capable of large deformation. The model reproduces the classical equations of state for dielectrics at small deformation, but shows that some electrostrictive effects negligible at small deformation may become pronounced at large deformation.

Subject to a voltage, a dielectric elastomer can deform substantially, making it a desirable material for actuators. Designing such an actuator, however, has been challenging due to nonlinear equations of state, as well as multiple modes of failure, parameters of design, and measures of performance. This paper explores these issues, using a spring-roll actuator as an example. We formulate the equations of state of two degrees of freedom, and describe the constraints due to several modes of failure of the elastomer, including electrical breakdown, electromechanical instability, loss of tension, and tensile rupture. Also included is the compressive limit of the spring.

In a previous paper , we have demonstrated that a microcrystalline copper film well bonded to a polymer substrate can be stretched beyond 50% without cracking. The film eventually fails through the co-evolution of necking and debonding from the substrate. Here we report much lower strains to failure (around 10%) for polymer-supported nanocrystalline metal films, whose microstructure is revealed to be unstable under mechanical loading.

At the invitation of David Clarke on behalf of the UCSB/Los Alamos Institute of Multiscale Materials and Structures, I gave the following three lectures:

1. Large deformation and instability in dielectric elastomers
2. Large deformation and instability in swelling polymeric gels
3. Mechanics and electrochemistry of polyelectrolyte gels

The abstracts follow, and the slides are attached at the end of this post.

A network of polymers can imbibe a large quantity of a solvent and swell, resulting in a gel.  The swelling process can be markedly influenced by a mechanical load and geometric constraint.  When the network, solvent, and mechanical load equilibrate, the gel usually swells by a field of inhomogeneous and anisotropic deformation.  We show that this field in the swollen gel is equivalent to that in a hyperelastic solid.  We implement this theory in the finite-element package, ABAQUS, and analyze examples of swelling-induced deformation, contact, and bifurcation.  Because commercial software like ABAQUS is widely available, this work may provide a powerful tool to study complex phenomena in gels.

Rob Wood teaches a course on micro/nano robotics, and asks me to give a 30-minute tutorial on the theory of dielectric elastomer actuators (DEAs).  I attach my slides, which might be useful to you if you'd like to include this topic in your class.  The tutorial draws upon work in the literature, as well as recent work in my group:

I'm attaching slides of a talk that I gave yesterday at the Schlumberger-Doll Research Center.  In preparing the talk, I made liberal use of slides prepared by Wei Hong for his own presentations.  The talk is mainly based on the following papers:

A polymer network can imbibe water from environment and swell to an equilibrium state. If the equilibrium is reached when the network is subject to external mechanical constraint, the deformation of the network is typically anisotropic, and the concentration of water inhomogeneous.  Such an equilibrium state in a network constrained by a hard core is modeled here with a nonlinear differential equation.  The presence of the hard core markedly reduces the concentration of water near the interface and causes high stresses.

Hydrogels have enormous potential for making adaptive structures in response to diverse stimuli.  In a structure demonstrated recently, for example, nanoscale rods of silicon were embedded vertically in a swollen hydrogel, and the rods tilted by a large angle in response to a drying environment (Sidorenko, et al., Science 315, 487, 2007).  Here we describe a model to show that this behavior corresponds to a bifurcation at a critical humidity, analogous to a phase transition of the second kind.

I attach slides for an ASME talk, which is based on a recent paper.

I attach the slides of a presentation at the ASME meeting.  The talk was based on several recent papers on soft active materials (SAMs).  To give an uncluttered picture of the pull-in instability, I have removed all discussion on the Maxwell stress.   As you can see, the problem can be studied without ever mentioning this troublesome notion.

I have recently given seminars on Mechanics of Soft Active Materials (SAMs) at several universities, using this set of slides (pdf, 1.4 MB).  I also attach the slides as ppt; please feel free to use anyway you want.  Here is an abstract of the seminars, followed by a list of papers published by my group on the topic.  Each paper has initiated on iMechanica a thread of discussion, to which I'll link.  I'll give a talk at the ASME Congress in Seattle, in Session 10-12-4 Instability in Solids, 9:45 am - 11:15 am, Thursday, 15 November 2007.  

A 1um-thick Cu film was deposited on Kapton 50HN substrate, with a thin Cr interlayer to improve adhesion. The specimen was in-situ annealed at 200oC for 30min after deposition.

This FIB image was taken after the specimen was uniaxially stretched to 50% and released.

A link for the paper: http://www.seas.harvard.edu/suo/papers/201.pdf

   A large quantity of small molecules may migrate into a network of long polymers, causing the network to swell, forming an aggregate known as a polymeric gel.  This paper formulates a theory of the coupled mass transport and large deformation.

      This paper studies a gel formed by a network of cross-linked polymers and a species of mobile molecules. The gel is taken to be a dielectric, in which both the polymers and the mobile molecules are nonionic. We formulate a theory of the gel in contact with a solvent made of the mobile molecules, and subject to electromechanical loads. A free-energy function is constructed for an ideal dielectric gel, including contributions from stretching the network, mixing the polymers and the small molecules, and polarizing the gel. We show that the free-energy function is non-convex, leading to instabilities. We also show that mechanical constraint markedly affects the behavior of the gel.

      This letter describes a method to analyze electromechanical stability of dielectric elastomer actuators.  We write the free energy of an actuator using stretches and nominal electric displacement as generalized coordinates, and pre-stresses and voltage as control parameters.  When the Hessian of the free-energy function ceases to be positive-definite, the actuator thins down drastically, often resulting in electrical breakdown.  Our calculation shows that stability of the actuator is markedly enhanced by pre-stresses.

When an electric voltage is applied across the thickness of a thin layer of an dielectric elastomer, the layer reduces its thickness and expands its area. This electrically induced deformation can be rapid and large, and is potentially useful as soft actuators in diverse technologies. Recent experimental and theoretical studies have shown that, when the voltage exceeds some critical value, the homogenous deformation of the layer becomes unstable, and the layer deforms into a mixture of thin and thick regions. Subsequently, as more electric charge is applied, the thin regions enlarge at the expense of the thick regions. On the basis of a recently formulated nonlinear field theory, this paper develops a meshfree method to simulate numerically this instability.

In flip-chip package, the mismatch of thermal expansion coefficients between the silicon die and packaging substrate induces concentrated stress field around the edges and corners of silicon die during assembly, testing and services. The concentrated stresses result in delamination on many interfaces on several levels of structures, in various length scales from tens of nanometers to hundreds of micrometers. A major challenge to model flip-chip packages is the huge variation of length scales, the complexity of microstructures, and diverse materials properties. In this paper, we simplify the structure to be silicon/substrate with wedge configuration, and neglect the small local features of integrated circuits. This macroscopic analysis on package level is generic with whatever small local features, as long as the physical processes of interest occur in the region where the concentrated stress field due to chip-packaging interaction dominates. Because it is the same driving force that motivates all of the flaws. Therefore, the different interface cracks with same size and same orientation but on different interfaces should have similar energy release rates provided that the cracks are much smaller than the macroscopic length. We calculate the energy release rate and the mode angle of crack on the chip-package interface based on the asymptotic linear elastic stress field. In a large range of crack length, the asymptotic solution agrees with finite element calculation very well. We discuss the simplified model and results in context of real applications. In addition, we find that the relation of energy release rate G and crack length a is not power-law since local mode mixity is dependent of crack length a. Therefore, the curve of G~a can be wavy and hardly goes to zero even if crack length a goes to atomically small. The local mode mixity plays an important role in crack behavior.

Abstract

Active polymers are being developed to mimic a salient feature of life: movement in response to stimuli. Large deformation can lead to intriguing phenomena; for example, recent experiments have shown that a voltage can deform a layer of a dielectric elastomer into two coexistent states, one being flat and the other wrinkled. This observation, as well as the needs to analyze large deformation under diverse stimuli, has led us to reexamine the theory of electromechanics. In his classic text, Maxwell showed that electric forces between conductors in a vacuum could be calculated using a field of stress in the vacuum. The Maxwell stress has since been invoked in deformable dielectrics. This practice has been on an insecure theoretical foundation.

As another celebration of March Journal Club of Mechanics of Flexible Electronics, this paper has just been submitted.

Abstract 

In one design of flexible electronics, thin-film islands of a stiff material are fabricated on a polymeric substrate, and functional materials are grown on these islands. When the substrate is stretched, the deformation is mainly accommodated by the substrate, and the islands and functional materials experience relatively small strains. Experiments have shown that, however, for a given amount of stretch, the islands exceeding a certain size may delaminate from the substrate. We calculate the energy release rate using a combination of finite element method and complex variable method. Our results show that the energy release rate diminishes as the island size or substrate stiffness decreases. Consequently, the critical island size is large when the substrate is compliant. We also obtain an analytical expression for the energy release rate of debonding islands from a very compliant substrate.

by Juil Yoon, Zhen Zhang, Nanshu Lu, Zhigang Suo

As well pointed out by Journal Club of March 2007, the flexible electronics is an emerging technology.

By Martijn Feron, Zhen Zhang and Zhigang Suo

The mobility of charge carriers in silicon can be significantly increased when silicon is subject to a field of strain.In a microelectronic device, however, the strain field may be intensified at a sharp feature, such as an edge or a corner, injecting dislocations into silicon and ultimately failing the device. The strain field at an edge is singular, and is often a linear superposition of two modes of different exponents. We characterize the relative contribution of the two modes by a mode angle, and determine the critical slip systems as the amplitude of the load increases. We calculate the critical residual stress in a thin-film stripe bonded on a silicon substrate.