Low dielectric constant (low-k) is achieved often at the cost of degraded mechanical properties, making it difficult to integrate the dielectric in the back end of line (BEOL) and to package low-k chips. Development of low-k technology becomes costly and time-consuming. Therefore, more frequently than before, people resort to modeling to understand mechanical issues and avoid failures. In this paper we present three multilevel patterned film models to examine channel cracking in low-k BEOL. The effects of copper features, caps and multilevel interconnects are investigated and their implications to BEOL fabrication are discussed.

Low-k BEOL Mechanical Modeling
Liu, Xiao Hu; Lane, Michael W; Shaw, Thomas M; Liniger, Eric G; Rosenberg, Robert R; Edelstein, Daniel C
Advanced Metallization Conference 2004 (AMC 2004); San Diego, CA and Tokyo; USa and Japan; 19-21 Oct. 2004 and 28-29 Sept. 2004. pp. 361-367. 2005