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 <title>iMechanica - IBM Airgap Microprocessors enabled by self assembly (Video) - Comments</title>
 <link>http://www.imechanica.org/node/1346</link>
 <description>Comments for &quot;IBM Airgap Microprocessors enabled by self assembly (Video)&quot;</description>
 <language>en</language>
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 <title>another questions</title>
 <link>http://www.imechanica.org/node/1346#comment-2738</link>
 <description>&lt;p&gt;
Hi Ting,
&lt;/p&gt;
&lt;p&gt;
&amp;nbsp;&amp;nbsp; Got it. Thanks.
&lt;/p&gt;
&lt;p&gt;
&amp;nbsp;&amp;nbsp; The vacuum air gaps play as dielectric(insulator) between interconnectors. If the moisture comes in, will it change the dielectric properites greatly? Or, the moisture just results in &amp;quot;popcorn&amp;quot;?
&lt;/p&gt;
&lt;p&gt;&amp;nbsp;&amp;nbsp;&amp;nbsp; For most cases, the failure(crack, delamination, et.al) comes from the mismatch. Now the interconnectors are surrounded by vacuum, which means the mismatch disappears&lt;br /&gt;
. Is it possible that the vacuum improves the mechanical properties?&amp;nbsp;&lt;/p&gt;
&lt;br class=&quot;clear&quot; /&gt;</description>
 <pubDate>Tue, 08 May 2007 11:35:16 -0400</pubDate>
 <dc:creator>Xue Feng</dc:creator>
 <guid isPermaLink="false">comment 2738 at http://www.imechanica.org</guid>
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<item>
 <title>air gaps</title>
 <link>http://www.imechanica.org/node/1346#comment-2706</link>
 <description>&lt;p&gt;It is &amp;quot;vacuum&amp;quot; because the next processing step is dielectric(s) deposition usually perform at 300-400 C under low pressure (a few Torr). Once deposited the next layer, it will cap/seal the environment inside the gaps. It is not truly vacuum (10e-10 T). The pressure inside should be in a few Torr range. This goes the same with the nm openings in porous low-k. The nm openings should be in mT also. The espect ratio (height/width) of the air gap is pretty high. Don&amp;#39;t think there will be any mechanical issues. &lt;/p&gt;
&lt;p&gt; It is quite important to keep the moisture out of these systems. This will causes copper corrosion and the leakage. What I am interested is the electromigration performances of these copper lines since there is no constraint to prevent metal extrusion.&lt;/p&gt;
&lt;br class=&quot;clear&quot; /&gt;</description>
 <pubDate>Mon, 07 May 2007 05:33:22 -0400</pubDate>
 <dc:creator>Ting Tsui</dc:creator>
 <guid isPermaLink="false">comment 2706 at http://www.imechanica.org</guid>
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<item>
 <title>Hi Teng,
   You can refer</title>
 <link>http://www.imechanica.org/node/1346#comment-2677</link>
 <description>&lt;p&gt;Hi Teng,&lt;/p&gt;
&lt;p&gt;   You can refer to the link:http://www-03.ibm.com/press/us/en/pressrelease/21473.wss.&lt;/p&gt;
&lt;p&gt; The copper interconnects are patterned by lithography, but the airgaps are formed by self-assembly. But I am wondering how the hole comes with vacuum. Is it possible that the pressure outside crash  the hole(hollow pipe)?&lt;/p&gt;
&lt;p&gt;best,&lt;/p&gt;
&lt;p&gt;xue &lt;/p&gt;
&lt;br class=&quot;clear&quot; /&gt;</description>
 <pubDate>Sat, 05 May 2007 09:27:04 -0400</pubDate>
 <dc:creator>Xue Feng</dc:creator>
 <guid isPermaLink="false">comment 2677 at http://www.imechanica.org</guid>
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 <title>How are airgaps formed?</title>
 <link>http://www.imechanica.org/node/1346#comment-2663</link>
 <description>&lt;p&gt;From the video, it seems (at least to me) the self-assembly process occurs in the thin cap layer above interconnects, while the airgaps are still formed through conventional photolithographical etching. Please correct me if I misunderstand.&lt;/p&gt;
&lt;br class=&quot;clear&quot; /&gt;</description>
 <pubDate>Fri, 04 May 2007 10:24:19 -0400</pubDate>
 <dc:creator>Teng Li</dc:creator>
 <guid isPermaLink="false">comment 2663 at http://www.imechanica.org</guid>
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<item>
 <title>IBM Airgap Microprocessors enabled by self assembly (Video)</title>
 <link>http://www.imechanica.org/node/1346</link>
 <description>&lt;p&gt;An earlier post by &lt;a href=&quot;/user/157&quot;&gt;Xiaohu Liu&lt;/a&gt; reported IBM&amp;#39;s latest progress in microprocessors. &lt;span class=&quot;labelsNormal&quot;&gt;IBM has figured out how to control and perfect the self assembly process to create trillions of tiny, nano-sized holes across a chip, which speed electrons that flow across wires inside the chip and reduce the power consumed by 15 percent.&lt;/span&gt;The following short video may help us understand a little bit more about the new technology. More videos, audio and images on this are available &lt;a href=&quot;http://www.thenewsmarket.com/CustomLink/StoryDetailsEx.aspx?GUID=0dc92cee-a562-47f4-91bb-f219efcbe75f&amp;amp;ParentGUID=0db24052-9a2e-4ff0-a2cf-b6d75b55c704&quot;&gt;here&lt;/a&gt; (free, but registration needed)&lt;object width=&quot;425&quot; height=&quot;350&quot;&gt;&lt;br /&gt;
&lt;param name=&quot;movie&quot; value=&quot;http://www.youtube.com/v/T8p8_zZNJEU&quot;&gt;&lt;/param&gt;
&lt;param name=&quot;wmode&quot; value=&quot;transparent&quot;&gt;&lt;/param&gt;&lt;embed src=&quot;http://www.youtube.com/v/T8p8_zZNJEU&quot; type=&quot;application/x-shockwave-flash&quot; wmode=&quot;transparent&quot; width=&quot;425&quot; height=&quot;350&quot;&gt;&lt;/embed&gt;&lt;/object&gt;&lt;br /&gt;
Enjoy.
&lt;p&gt;-Teng &lt;/p&gt;
&lt;br class=&quot;clear&quot; /&gt;</description>
 <comments>http://www.imechanica.org/node/1346#comments</comments>
 <category domain="http://www.imechanica.org/taxonomy/term/437">video</category>
 <category domain="http://www.imechanica.org/taxonomy/term/924">technology</category>
 <pubDate>Fri, 04 May 2007 10:14:10 -0400</pubDate>
 <dc:creator>Teng Li</dc:creator>
 <guid isPermaLink="false">1346 at http://www.imechanica.org</guid>
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